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AEM

CMPDM8120

860mA,20V Surface mount MOSFET P-Channel Enhancement Mode

Specifications

Case Type
SOT-23
Common Source Input Capacitance (Ciss)
200 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
80 pF
Continuous Drain Current
950 mA
Continuous Drain Current
860 mA
Continuous Source Current (Body Diode)
360 mA
Diode Forward On Voltage (VSD)
0.9 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
2000 mS
Gate Leakage Current, Forward (IGSSF)
50 nA
Gate Leakage Current, Reverse (IGSSR)
50 nA
Gate Threshold Voltage (VGS(th))
0.45 — 1 V(0.76 V Typical)
Gate-Drain Charge (Qgd)
1.52 nC
Gate-Source Charge (Qgs)
0.36 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Maximum Pulsed Source Current
4 A
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
0.5 µA
Static Drain-Source On Resistance (rDS(ON))
0.2 Ω
Static Drain-Source On Resistance (rDS(ON))
0.142 Ω
Static Drain-Source On Resistance (rDS(ON))
0.15 Ω
Static Drain-Source On Resistance (rDS(ON))
0.24 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
3.56 nC
Turn Off Time (toff)
25 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active860mA,20V Surface mount MOSFET P-Channel Enhancement ModeBox3,500PBFREE
Special Order Item860mA,20V Surface mount MOSFET P-Channel Enhancement ModeTape & Reel3,000PBFREE

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