CMPFJ177
.8V,2.5V,50mA,225mW Surface mount JFET P Channel
Specifications
Case Type
SOT-23
Continuous Gate Current
50 mA
Drain-Gate Voltage
30 V
ECCN Code
EAR99
Gate Leakage Current (IGSS)
1 nA
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
0.8 — 2.5 V
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
225 mW
Saturation Drain Current (IDSS)
1500 — 20000 µA
Static Drain-Source On Resistance (rDS(ON))
300 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
556 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | .8V,2.5V,50mA,225mW Surface mount JFET P Channel | Box | 3,500 | PBFREE | |
| Active | .8V,2.5V,50mA,225mW Surface mount JFET P Channel | Tape & Reel | 3,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bond Wire | Analytical Test Report |
| Analytical Test Report:Gold Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Henkel 84-1LMISR4 | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CMPFJ175-176.PDF | Device Datasheet |
| Material Composition:SOT-23 | Material Composition |
| Package Detail Document:SOT-23 | Package Detail Document |
| Product Reliability Data:SOT-23 Package Reliability | Product Reliability Data |
| Step File 3D Object:SOT-23 | Step File 3D Object |