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AEM

CMPT4401

40V,600mA,225mW Surface mount Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base Cutoff Current (IBL)
100 nA
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 0.95 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
20 x10³
Delay Time (td)
15 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
Fall Time (tf)
30 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
30 pF
Input Impedance Common Emitter (hie)
1 — 15 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Output Admittance Common Emitter (hoe)
1 — 30 µS
Output Capacitance (Cob)
6.5 pF
Power Dissipation
225 mW
Rise Time (tr)
20 ns
Small Signal Current Gain (hfe)
40 — 500 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
225 ns
Thermal Resistance Junction-Ambient
556 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.01 — 0.8 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active40V,600mA,225mW Surface mount Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox3,500PBFREE

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