Skip to main content
AEM

CMPT4403

40V,600mA,225mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base Cutoff Current (IBL)
100 nA
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 0.95 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
30 x10³
Delay Time (td)
15 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
Fall Time (tf)
50 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
30 pF
Input Impedance Common Emitter (hie)
1.5 — 15 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Output Admittance Common Emitter (hoe)
1 — 100 µS
Output Capacitance (Cob)
8.5 pF
Power Dissipation
225 mW
Rise Time (tr)
20 ns
Small Signal Current Gain (hfe)
60 — 500 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
225 ns
Thermal Resistance Junction-Ambient
556 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.01 — 0.8 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active40V,600mA,225mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox3,500PBFREE

Resources

Recently Viewed