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AEM

CMPT5086B

50V,50mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
200 — 400 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage
3 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
3 dB
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
350 mW
Small Signal Current Gain (hfe)
150 — 600 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active50V,50mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low NoiseBox3,500PBFREE
Special Order Item50V,50mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP Low NoiseTape & Reel3,000PBFREE

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