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AEM

CMPT5088E

50V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
100 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
300 x10³
DC Current Gain (hFE)
300 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
300 — 900 x10³(430 x10³ Typical)
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
15 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
350 mW
Small Signal Current Gain (hfe)
350 — 1400 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active50V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low NoiseBox3,500PBFREE
Special Order Item50V,100mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel3,000PBFREE

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