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AEM

CMPT591E

60V,1A,350mW Surface mount Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
200 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
200 — 600 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
2 A
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active60V,1A,350mW Surface mount Transistor-Small Signal (<=1A) PNP High CurrentBox3,500PBFREE

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