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AEM

CMPT6427

500mA,40V Surface mount Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
1.75 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEO)
1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
130 MHz
DC Current Gain (hFE)
20 — 200 x10³
DC Current Gain (hFE)
14 — 140 x10³
DC Current Gain (hFE)
10 — 100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
12 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
12 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
15 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
7 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active500mA,40V Surface mount Transistor-Small Signal (<=1A) NPN DarlingtonBox3,500PBFREE
Active500mA,40V Surface mount Transistor-Small Signal (<=1A) NPN DarlingtonTape & Reel3,000TINNo

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