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AEM

CMPT6517

350V,500mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Base-Emitter On Voltage (VBE(ON))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
350 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
350 V
Continuous Base Current
250 mA
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
40 — 200 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
30 — 200 x10³
DC Current Gain (hFE)
20 — 200 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
95 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active350V,500mA,350mW Surface mount Transistor-Small Signal (<=1A) NPN High VoltageBox3,500PBFREE

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