CMPTA42E-RZ
350V,500mA,350mW SMD Ruggedized Devices Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
350 V
Collector-Base Cutoff Current (ICBO)
250 nA
Collector-Base Voltage
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
350 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 350V,500mA,350mW SMD Ruggedized Devices Transistor-Small Signal (<=1A) NPN High Voltage | Tape & Reel | 3,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bond Wire | Analytical Test Report |
| Analytical Test Report:Gold Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Henkel 84-1LMISR4 | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CMPTA42E.PDF | Device Datasheet |
| Material Composition:SOT-23 | Material Composition |
| Package Detail Document:SOT-23 | Package Detail Document |
| Product Brief:PB_RUGGEDIZED | Product Brief |
| Product Reliability Data:SOT-23 Package Reliability | Product Reliability Data |
| Step File 3D Object:SOT-23 | Step File 3D Object |