Skip to main content
AEM

CMPTA94

400V,300mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.75 V
Case Type
SOT-23
Collector-Base Breakdown Voltage (BVCBO)
400 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
400 V
Collector-Emitter Breakdown Voltage (BVCES)
400 V
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICES)
0.5 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
400 V
Continuous Collector Current
300 mA
Current Gain-Bandwidth Product (fT)
20 MHz
DC Current Gain (hFE)
50 — 200 x10³
DC Current Gain (hFE)
45 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
130 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
7 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active400V,300mA,350mW Surface mount Transistor-Small Signal (<=1A) PNP High VoltageBox3,500PBFREE

Resources

Recently Viewed