CMRDM3575
Surface mount MOSFET 160mA,20V Dual: N-Channel/P-Channel MOSFET&140mA,20V
Specifications
Case Type
SOT-963
Common Source Input Capacitance (Ciss)
10 pF
Common Source Input Capacitance (Ciss)
9 pF
Common Source Output Capacitance (Coss)
3.7 pF
Common Source Output Capacitance (Coss)
3 pF
Common Source Reverse Transfer Capacitance (Crss)
4 pF
Common Source Reverse Transfer Capacitance (Crss)
2.2 pF
Continuous Drain Current
200 mA
Continuous Drain Current
140 mA
Continuous Drain Current
180 mA
Continuous Drain Current
160 mA
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
140 mS
Forward Transconductance (gFS)
1300 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.4 — 1 V
Gate Threshold Voltage (VGS(th))
0.4 — 1 V
Gate-Drain Charge (Qgd)
0.11 nC
Gate-Drain Charge (Qgd)
0.138 nC
Gate-Source Charge (Qgs)
0.17 nC
Gate-Source Charge (Qgs)
0.176 nC
Gate-Source Voltage (VGS)
8 V
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
125 mW
Saturation Drain Current (IDSS)
0.05 µA
Saturation Drain Current (IDSS)
0.1 µA
Saturation Drain Current (IDSS)
0.1 µA
Saturation Drain Current (IDSS)
0.05 µA
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Static Drain-Source On Resistance (rDS(ON))
20 Ω
Static Drain-Source On Resistance (rDS(ON))
10 Ω
Static Drain-Source On Resistance (rDS(ON))
17 Ω
Static Drain-Source On Resistance (rDS(ON))
6 Ω
Static Drain-Source On Resistance (rDS(ON))
10 Ω
Static Drain-Source On Resistance (rDS(ON))
4 Ω
Static Drain-Source On Resistance (rDS(ON))
7 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Static Drain-Source On Resistance (rDS(ON))
7 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
1000 °C/W
Total Gate Charge (Qg)
0.5 nC
Total Gate Charge (Qg)
0.458 nC
Turn Off Time (toff)
100 ns
Turn Off Time (toff)
85 ns
Turn On Time (ton)
35 ns
Turn On Time (ton)
25 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Special Order Item | Surface mount MOSFET 160mA,20V Dual: N-Channel/P-Channel MOSFET&140mA,20V | Box | 5,000 | PBFREE | ||
| Special Order Item | Surface mount MOSFET 160mA,20V Dual: N-Channel/P-Channel MOSFET&140mA,20V | Tape & Reel | 8,000 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Gold Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| CMRDM3575.PDF | Device Datasheet |
| Material Composition:SOT-963 | Material Composition |
| Package Detail Document:SOT-963 | Package Detail Document |
| Product Reliability Data:SOT-963 Package Reliability | Product Reliability Data |
| Spice Model:Spice Model CMRDM3575_NCHAN | Spice Model |
| Spice Model:Spice Model CMRDM3575_PCHAN | Spice Model |