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AEM

CMRDM7590

140mA,20V Surface mount MOSFET Dual P-Channel Enhancement Mode

Specifications

Case Type
SOT-963
Common Source Input Capacitance (Ciss)
10 pF
Common Source Output Capacitance (Coss)
3.7 pF
Common Source Reverse Transfer Capacitance (Crss)
4 pF
Continuous Drain Current
180 mA
Continuous Drain Current
140 mA
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
140 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.4 — 1 V
Gate-Drain Charge (Qgd)
0.11 nC
Gate-Source Charge (Qgs)
0.17 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
125 mW
Saturation Drain Current (IDSS)
0.1 µA
Saturation Drain Current (IDSS)
0.05 µA
Static Drain-Source On Resistance (rDS(ON))
17 Ω
Static Drain-Source On Resistance (rDS(ON))
10 Ω
Static Drain-Source On Resistance (rDS(ON))
7 Ω
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Static Drain-Source On Resistance (rDS(ON))
20 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
1000 °C/W
Total Gate Charge (Qg)
0.5 nC
Turn Off Time (toff)
100 ns
Turn On Time (ton)
35 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Special Order Item140mA,20V Surface mount MOSFET Dual P-Channel Enhancement ModeBox5,000PBFREE
Special Order Item140mA,20V Surface mount MOSFET Dual P-Channel Enhancement ModeTape & Reel8,000TINNo

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