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AEM

CMST6427E

500mA,40V Surface mount Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
1.75 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Case Type
SOT-323
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCES)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEO)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
850 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
800 mV
Collector-Emitter Voltage (VCEO)
40 V
Collector-Emitter Voltage (VCES)
60 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
25 — 200 x10³
DC Current Gain (hFE)
15 — 140 x10³
DC Current Gain (hFE)
15 — 100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
14 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
12 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
15 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
7 pF
Power Dissipation
275 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
455 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active500mA,40V Surface mount Transistor-Small Signal (<=1A) NPN DarlingtonTape & Reel3,000PBFREE

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