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AEM

CMUDM7004

450mA,30V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
SOT-523
Common Source Input Capacitance (Ciss)
45 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
10 pF
Continuous Drain Current
450 mA
Diode Forward On Voltage (VSD)
0.5 — 1.1 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
3000 nA
Gate Leakage Current, Reverse (IGSSR)
3000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.23 nC
Gate-Source Charge (Qgs)
0.15 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
250 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.56 Ω
Static Drain-Source On Resistance (rDS(ON))
0.46 Ω
Static Drain-Source On Resistance (rDS(ON))
0.73 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.792 nC
Turn Off Time (toff)
75 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued450mA,30V Surface mount MOSFET N-Channel Enhancement ModeBox5,000PBFREE
Discontinued450mA,30V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel3,000TINNo

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