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AEM

CMUDM8001

100mA,20V Surface mount MOSFET P-Channel Enhancement Mode

Specifications

Case Type
SOT-523
Common Source Input Capacitance (Ciss)
45 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
15 pF
Continuous Drain Current
100 mA
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
100 mS
Gate Leakage Current, Forward (IGSSF)
1000 nA
Gate Leakage Current, Reverse (IGSSR)
1000 nA
Gate Threshold Voltage (VGS(th))
0.6 — 1.1 V
Gate-Drain Charge (Qgd)
0.181 nC
Gate-Source Charge (Qgs)
0.158 nC
Gate-Source Voltage (VGS)
10 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
200 mA
Power Dissipation
250 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
8 Ω
Static Drain-Source On Resistance (rDS(ON))
12 Ω
Static Drain-Source On Resistance (rDS(ON))
45 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.658 nC
Turn Off Time (toff)
80 ns
Turn On Time (ton)
35 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active100mA,20V Surface mount MOSFET P-Channel Enhancement ModeBox5,000PBFREE
Active100mA,20V Surface mount MOSFET P-Channel Enhancement ModeTape & Reel3,000TINNo

Resources

ItemType
Analytical Test Report:Green Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Halogen Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
CMUDM8001.PDFDevice Datasheet
Material Composition:SOT-523Material Composition
Package Detail Document:SOT-523Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-523Process Change Notice
Product Reliability Data:SOT-523 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model CMUDM8001Spice Model
Step File 3D Object:SOT-523 (SC-89)Step File 3D Object

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