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AEM

CMUDM8004

450mA,30V Surface mount MOSFET P-Channel Enhancement Mode

Specifications

Case Type
SOT-523
Common Source Input Capacitance (Ciss)
55 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
10 pF
Continuous Drain Current
450 mA
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
3000 nA
Gate Leakage Current, Reverse (IGSSR)
3000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.128 nC
Gate-Source Charge (Qgs)
0.35 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
250 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
1.1 Ω
Static Drain-Source On Resistance (rDS(ON))
3.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.88 nC

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active450mA,30V Surface mount MOSFET P-Channel Enhancement ModeBox5,000PBFREE
Active450mA,30V Surface mount MOSFET P-Channel Enhancement ModeTape & Reel3,000TINNo

Resources

ItemType
Analytical Test Report:Green Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Halogen Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
CMUDM8004.PDFDevice Datasheet
Material Composition:SOT-523Material Composition
Package Detail Document:SOT-523Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-523Process Change Notice
Product Reliability Data:SOT-523 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model CMUDM8004Spice Model
Step File 3D Object:SOT-523 (SC-89)Step File 3D Object

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