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AEM

CMUT3906

40V,200mA,250mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.85 V
Case Type
SOT-523
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.05 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
60 x10³
Delay Time (td)
35 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
Fall Time (tf)
80 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
12 pF
Input Impedance Common Emitter (hie)
2 — 12 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
4 dB
Output Admittance Common Emitter (hoe)
3 — 60 µS
Output Capacitance (Cob)
4.5 pF
Power Dissipation
250 mW
Rise Time (tr)
35 ns
Small Signal Current Gain (hfe)
100 — 400 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
170 ns
Thermal Resistance Junction-Ambient
500 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.01 — 1 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active40V,200mA,250mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox5,000PBFREE
Active40V,200mA,250mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchTape & Reel3,000TINNo

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