CMXT3946
Surface mount Transistor-Small Signal (<=1A) 40V Dual NPN&40V PNP General Purpose Amplifier
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.85 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.85 V
Case Type
SOT-26
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Voltage
40 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.05 µA
Collector-Emitter Cutoff Current (ICEV)
0.05 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
40 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
250 MHz
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
70 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
40 x10³
Delay Time (td)
35 ns
Delay Time (td)
35 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
5 V
Emitter-Base Voltage
6 V
Fall Time (tf)
75 ns
Fall Time (tf)
50 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
12 pF
Input Capacitance (Cib)
12 pF
Input Impedance Common Emitter (hie)
2 — 12 kΩ
Input Impedance Common Emitter (hie)
1 — 10 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
4 dB
Noise Figure (NF)
5 dB
Output Admittance Common Emitter (hoe)
3 — 60 µS
Output Admittance Common Emitter (hoe)
1 — 40 µS
Output Capacitance (Cob)
4.5 pF
Output Capacitance (Cob)
4 pF
Power Dissipation
350 mW
Rise Time (tr)
35 ns
Rise Time (tr)
35 ns
Small Signal Current Gain (hfe)
100 — 400 x10³
Small Signal Current Gain (hfe)
100 — 400 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
225 ns
Storage Time (ts)
200 ns
Thermal Resistance Junction-Ambient
357 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.01 — 1 x10⁻³
Voltage Feedback Ratio Common Emitter (hre)
0.05 — 0.8 x10⁻³
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | Surface mount Transistor-Small Signal (<=1A) 40V Dual NPN&40V PNP General Purpose Amplifier | Box | 3,500 | PBFREE | ||
| Active | Surface mount Transistor-Small Signal (<=1A) 40V Dual NPN&40V PNP General Purpose Amplifier | Tape & Reel | 3,000 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Gold Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Henkel 84-1LMISR4 | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CMXT3946.PDF | Device Datasheet |
| Material Composition:SOT-26 | Material Composition |
| Package Detail Document:SOT-26 | Package Detail Document |
| Process Change Notice:SOT-26 CASE | Process Change Notice |
| Product Reliability Data:SOT-26 Package Reliability | Product Reliability Data |
| Spice Model:Spice Model CMXT3946_NPN | Spice Model |
| Spice Model:Spice Model CMXT3946_PNP | Spice Model |
| Step File 3D Object:SOT-26 | Step File 3D Object |