CP188-2N2919
60V,30mA,300mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A)
Specifications
B-E Voltage Differential Change Due To Temperature (Δ(VBE1-VBE2))
10 µV/°C
B-E Voltage Differential Change Due To Temperature (Δ(VBE1-VBE2))
10 µV/°C
Base-Emitter On Voltage (VBE(ON))
0.7 V
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
3 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
2 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
0.002 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
30 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
60 — 240 x10³
DC Current Gain Matching (hFE1/hFE2)
0.9 — 1
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
2 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Input Impedance Common Base (hib)
25 — 32 Ω
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4 dB
Noise Figure (NF)
4 dB
Output Admittance Common Base (hob)
1 µS
Output Capacitance (Cob)
6 pF
Power Dissipation
750 mW
Power Dissipation
500 mW
Power Dissipation
1.5 W
Power Dissipation
300 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 60V,30mA,300mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP188-2N2919_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CP188 and CP588 replaced by | Process Change Notice |
| Process Change Notice:WAFER THICKNESS REDUCTION | Process Change Notice |
| Product EOL Notice:CP188/588 to CP388X/788X | Product EOL Notice |