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AEM

CP208-TIP31C

100V,3A,2W Bare die,66.000 X 66.000 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
1.8 V
Case Type
CHIP,WAFFLE
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
300 µA
Collector-Emitter Cutoff Current (ICES)
200 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
1 A
Continuous Collector Current
3 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
10 — 60 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
5 A
Power Dissipation
40 W
Power Dissipation
2 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W
Thermal Resistance Junction-Case
3.125 °C/W
Turn Off Time (toff)
1000 ns
Turn On Time (ton)
300 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued100V,3A,2W Bare die,66.000 X 66.000 mils,Transistor-Bipolar Power (>1A)WafflePack324PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP208-TIP31C_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document
Product EOL Notice:CP208-TIP31CProduct EOL Notice
Spice Model:Spice Model CP208Spice Model

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