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AEM

CP226V-2N4391

4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFET

Specifications

Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
14 pF
Common Source Reverse Transfer Capacitance (Crss)
4 pF
Continuous Gate Current
50 mA
Drain Current-Off (ID(OFF))
200000 pA
Drain Current-Off (ID(OFF))
100 pA
Drain-Gate Voltage
40 V
Drain-Source On Resistance (rds(ON))
30 Ω
Drain-Source On Voltage (VDS(ON))
400 mV
ECCN Code
EAR99
Fall Time (tf)
15 ns
Gate Leakage Current (IGSS)
200 nA
Gate Leakage Current (IGSS)
0.1 nA
Gate-Source Breakdown Voltage (BVGSS)
40 V
Gate-Source Cutoff Voltage (VGS(OFF))
4 — 10 V
Gate-Source Forward Voltage (VGS(f))
1 V
Gate-Source Voltage (VGS)
40 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 175 °C
Power Dissipation
1.8 W
Rise Time (tr)
5 ns
Saturation Drain Current (IDSS)
50000 — 150000 µA
Static Drain-Source On Resistance (rDS(ON))
30 Ω
Storage Temperature (Tstg)
-65 — 175 °C
Turn-off Delay Time (tOFF)
20 ns
Turn-on Delay Time (tON)
15 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFETWafflePack400PBFREE
Active4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFETWafflePack400PBFREE
Active4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFETWafflePack20PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP226V-2N4391_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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