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CP230-2N6039

4A,80V Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,80.000 X 80.000 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
2.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
4 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
500000 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current
100 mA
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
25 MHz
DC Current Gain (hFE)
0.75 — 15 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
500 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
100 pF
Peak Collector Current
8 A
Power Dissipation
40 W
Power Dissipation
1.5 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
83.3 °C/W
Thermal Resistance Junction-Case
3.12 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued4A,80V Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,80.000 X 80.000 mils,Transistor-Bipolar Power (>1A)WafflePack100PBFREE

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