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AEM

CP232V-2N4416A

2.5V,6V,10mA,300mW Bare die,14.000 X 14.000 mils,JFET

Specifications

Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
4 pF
Common Source Input Susceptance (biss)
10 mS
Common Source Input Susceptance (biss)
2.5 mS
Common Source Output Capacitance (Coss)
2 pF
Common Source Output Susceptance (boss)
4000 µS
Common Source Output Susceptance (boss)
1000 µS
Common Source Power Gain (GPS)
10 dB
Common Source Power Gain (GPS)
18 dB
Common Source Reverse Transfer Capacitance (Crss)
1 pF
Continuous Gate Current
10 mA
Drain-Gate Voltage
35 V
Drain-Source Voltage
35 V
ECCN Code
EAR99
Forward Transadmittance (gfs)
4 mS
Forward Transadmittance (gfs)
4.5 — 7.5 mS
Gate Leakage Current (IGSS)
100 nA
Gate Leakage Current (IGSS)
0.1 nA
Gate-Source Breakdown Voltage (BVGSS)
35 V
Gate-Source Cutoff Voltage (VGS(OFF))
2.5 — 6 V
Gate-Source Voltage (VGS)
35 V
HTS Code
8541.21.0040
Input Conductance (gis)
1000 µS
Input Conductance (gis)
100 µS
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4 dB
Noise Figure (NF)
2 dB
Output Conductance (gos)
75 µS
Output Conductance (gos)
100 µS
Output Conductance (gos)
50 µS
Power Dissipation
300 mW
Saturation Drain Current (IDSS)
5000 — 15000 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active2.5V,6V,10mA,300mW Bare die,14.000 X 14.000 mils,JFETWafflePack400PBFREE
Active2.5V,6V,10mA,300mW Bare die,14.000 X 14.000 mils,JFETWafflePack400PBFREE
Special Order Item2.5V,6V,10mA,300mW Bare die,14.000 X 14.000 mils,JFETWafflePack20PBFREE

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