CP232V-2N5486
2V,6V,10mA,310mW Bare die,14.000 X 14.000 mils,JFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Forward Transadmittance (Re(yfs))
3.5 mS
Common Source Input Capacitance (Ciss)
5 pF
Common Source Input Conductance (Re(yis))
1 mS
Common Source Output Capacitance (Coss)
2 pF
Common Source Output Conductance (Re(yos))
100 µS
Common Source Power Gain (GPS)
10 — 20 dB
Common Source Power Gain (GPS)
18 — 30 dB
Common Source Reverse Transfer Capacitance (Crss)
1 pF
Continuous Drain Current
30 mA
Continuous Gate Current
10 mA
Drain-Gate Voltage
25 V
ECCN Code
EAR99
Forward Transadmittance (gfs)
4 — 8 mS
Gate Leakage Current (IGSS)
200 nA
Gate Leakage Current (IGSS)
1 nA
Gate-Source Breakdown Voltage (BVGSS)
25 V
Gate-Source Cutoff Voltage (VGS(OFF))
2 — 6 V
Gate-Source Voltage (VGS)
25 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Noise Figure (NF)
4 dB
Noise Figure (NF)
2.5 dB
Output Conductance (gos)
75 µS
Power Dissipation
310 mW
Saturation Drain Current (IDSS)
8000 — 20000 µA
Storage Temperature (Tstg)
-65 — 150 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 2V,6V,10mA,310mW Bare die,14.000 X 14.000 mils,JFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP232V-2N5486_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |