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AEM

CP326X-CMLDM7120

1A,20V Bare die,33.500 X 25.600 mils,MOSFET

Specifications

Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
220 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Continuous Drain Current
1 A
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
2500 mS
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate-Drain Charge (Qgd)
0.65 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
10 µA
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Static Drain-Source On Resistance (rDS(ON))
0.1 Ω
Static Drain-Source On Resistance (rDS(ON))
0.25 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
2.4 nC
Turn Off Time (toff)
140 ns
Turn On Time (ton)
25 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active1A,20V Bare die,33.500 X 25.600 mils,MOSFETWafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP326X-CMLDM7120_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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