CP343X-CXDM1002N
2A,100V Bare die,55.000 X 55.000 mils,MOSFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
550 pF
Common Source Output Capacitance (Coss)
45 pF
Common Source Reverse Transfer Capacitance (Crss)
48 pF
Continuous Drain Current
2 A
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
100 V
Drain-Source Voltage
100 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
15000 nA
Gate Leakage Current, Reverse (IGSSR)
15000 nA
Gate Threshold Voltage (VGS(th))
1.5 — 2.5 V(2.1 V Typical)
Gate-Drain Charge (Qgd)
3 nC
Gate-Source Charge (Qgs)
1.2 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
7 A
Power Dissipation
1.2 W
Saturation Drain Current (IDSS)
0.1 µA
Static Drain-Source On Resistance (rDS(ON))
0.3 Ω
Static Drain-Source On Resistance (rDS(ON))
0.35 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W
Total Gate Charge (Qg)
6 nC
Turn Off Time (toff)
50 ns
Turn On Time (ton)
32 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 2A,100V Bare die,55.000 X 55.000 mils,MOSFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP343X-CXDM1002N_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |