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AEM

CP350-CZDM8502N

2A,850V Bare die,85.050 X 110.650 mils,MOSFET

Specifications

Body Diode Reverse Recovery (trr)
361 ns
Body Diode Stored Charge (Qrr)
1.2 µC
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
383 pF
Common Source Output Capacitance (Coss)
39 pF
Common Source Reverse Transfer Capacitance (Crss)
1.6 pF
Continuous Drain Current
1.2 A
Continuous Drain Current
2 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
850 V
Drain-Source Voltage
850 V
ECCN Code
EAR99
Fall Time (tf)
27 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V
Gate-Drain Charge (Qgd)
4.6 nC
Gate-Source Charge (Qgs)
2.3 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
8 A
Rise Time (tr)
23 ns
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
180 mJ
Static Drain-Source On Resistance (rDS(ON))
6.3 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
9.7 nC
Turn-off Delay Time (tOFF)
26 ns
Turn-on Delay Time (tON)
13 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active2A,850V Bare die,85.050 X 110.650 mils,MOSFETWafflePack100PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP350-CZDM8502N_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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