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CP361R-CEDM7001
100mA,20V Bare die,14.173 X 14.173 mils,MOSFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
9 pF
Common Source Output Capacitance (Coss)
9.5 pF
Common Source Reverse Transfer Capacitance (Crss)
4 pF
Continuous Drain Current
100 mA
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
100 mS
Gate Leakage Current, Forward (IGSSF)
1000 nA
Gate Leakage Current, Reverse (IGSSR)
1000 nA
Gate Threshold Voltage (VGS(th))
0.6 — 0.9 V
Gate-Drain Charge (Qgd)
0.08 nC
Gate-Source Charge (Qgs)
0.16 nC
Gate-Source Voltage (VGS)
10 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
200 mA
Power Dissipation
100 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Static Drain-Source On Resistance (rDS(ON))
4 Ω
Static Drain-Source On Resistance (rDS(ON))
15 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.566 nC
Turn Off Time (toff)
75 ns
Turn On Time (ton)
50 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 100mA,20V Bare die,14.173 X 14.173 mils,MOSFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP361R-CEDM7001_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |