Specifications
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
240 pF
Common Source Output Capacitance (Coss)
50 pF
Common Source Reverse Transfer Capacitance (Crss)
25 pF
Continuous Drain Current
1 A
Diode Forward On Voltage (VSD)
0.9 V
Drain-Gate Voltage
60 V
Drain-Source Breakdown Voltage (BVDSS)
63 V
Drain-Source Voltage
60 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
1.2 — 2.3 V
Gate-Drain Charge (Qgd)
0.7 nC
Gate-Source Charge (Qgs)
1 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
5 A
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
0.5 µA
Static Drain-Source On Resistance (rDS(ON))
0.22 Ω
Static Drain-Source On Resistance (rDS(ON))
0.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
2.3 nC
Turn Off Time (toff)
50 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,31.700 X 31.700 mils,N-Chan Enhancement Mode MOSFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP379X-7002AHC_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |