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AEM

CP379X-7002AHC

Bare die,31.700 X 31.700 mils,N-Chan Enhancement Mode MOSFET

Specifications

Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
240 pF
Common Source Output Capacitance (Coss)
50 pF
Common Source Reverse Transfer Capacitance (Crss)
25 pF
Continuous Drain Current
1 A
Diode Forward On Voltage (VSD)
0.9 V
Drain-Gate Voltage
60 V
Drain-Source Breakdown Voltage (BVDSS)
63 V
Drain-Source Voltage
60 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
1.2 — 2.3 V
Gate-Drain Charge (Qgd)
0.7 nC
Gate-Source Charge (Qgs)
1 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
5 A
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
0.5 µA
Static Drain-Source On Resistance (rDS(ON))
0.22 Ω
Static Drain-Source On Resistance (rDS(ON))
0.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
2.3 nC
Turn Off Time (toff)
50 ns
Turn On Time (ton)
35 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
ActiveBare die,31.700 X 31.700 mils,N-Chan Enhancement Mode MOSFETWafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP379X-7002AHC_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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