Skip to main content
AEM

CP392V-2N3904

40V,200mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.85 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.05 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
70 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
5 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
100 — 400 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Turn Off Time (toff)
250 ns
Turn On Time (ton)
70 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active40V,200mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Active40V,200mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Special Order Item40V,200mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)WafflePack20PBFREE
Active40V,200mA,625mW Up-Screened Bare Die MIL-PRF-38534 Class K Equivalent,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

Recently Viewed