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CP398X-CTLDM303N

Bare die,37.800 X 26.000 mils,N-Chan Enhancement Mode MOSFET

Specifications

Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
590 pF
Common Source Output Capacitance (Coss)
50 pF
Common Source Reverse Transfer Capacitance (Crss)
55 pF
Continuous Drain Current
3.6 A
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transconductance (gFS)
11800 mS
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.6 — 1.2 V
Gate-Drain Charge (Qgd)
2.7 nC
Gate-Source Charge (Qgs)
1.4 nC
Gate-Source Voltage (VGS)
12 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
14.4 A
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.04 Ω
Static Drain-Source On Resistance (rDS(ON))
0.078 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
13 nC
Turn Off Time (toff)
29 ns
Turn On Time (ton)
15 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
ActiveBare die,37.800 X 26.000 mils,N-Chan Enhancement Mode MOSFETWafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP398X-CTLDM303N_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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