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CP406-CWDM3011N
11A,30V Bare die,63.800 X 38.900 mils,MOSFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
860 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
100 pF
Continuous Drain Current
11 A
Diode Forward On Voltage (VSD)
1.2 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 3 V(1.8 V Typical)
Gate-Drain Charge (Qgd)
2.3 nC
Gate-Source Charge (Qgs)
2 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
50 A
Power Dissipation
2.5 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.02 Ω
Static Drain-Source On Resistance (rDS(ON))
0.03 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
50 °C/W
Total Gate Charge (Qg)
6.3 nC
Turn Off Time (toff)
43 ns
Turn On Time (ton)
20 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Special Order Item | 11A,30V Bare die,63.800 X 38.900 mils,MOSFET | WafflePack | 340 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP406-CWDM3011N_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |