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AEM

CP527-TIP147

10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
3 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
1000000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
2000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
500 mA
Continuous Collector Current
10 A
DC Current Gain (hFE)
500 x10³
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
Forward Voltage (VF)
2.8 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
20 A
Power Dissipation
125 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
1 °C/W
Turn Off Time (toff)
4000 ns
Turn On Time (ton)
900 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)WafflePack100PBFREE
Active10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)WafflePack100PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP527-TIP147_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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