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CP548-2N5116
1V,4V,50mA,500mW Bare die,21.000 X 21.000 mils,JFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Gate Current
50 mA
Drain Current-Off (ID(OFF))
1000000 pA
Drain Current-Off (ID(OFF))
500 pA
Drain-Source On Resistance (rds(ON))
150 Ω
Drain-Source On Voltage (VDS(ON))
600 mV
ECCN Code
EAR99
Gate Leakage Current (IGSS)
1000 nA
Gate Leakage Current (IGSS)
0.5 nA
Gate-Drain Voltage
30 V
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
1 — 4 V
Gate-Source Forward Voltage (VGS(f))
1 V
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
500 mW
Saturation Drain Current (IDSS)
5000 — 25000 µA
Static Drain-Source On Resistance (rDS(ON))
150 Ω
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
60 ns
Turn On Time (ton)
42 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 1V,4V,50mA,500mW Bare die,21.000 X 21.000 mils,JFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP548-2N5116_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Product EOL Notice:CP548-2N5116 | Product EOL Notice |