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CP608-2N3741

80V,4A,25W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,66.000 X 66.000 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
1 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current
2 A
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
30 — 200 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
500000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
100 pF
Peak Collector Current
10 A
Power Dissipation
25 W
Small Signal Current Gain (hfe)
25 x10³
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued80V,4A,25W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,66.000 X 66.000 mils,Transistor-Bipolar Power (>1A)WafflePack324PBFREE

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