CP622-2N6027
40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT
Specifications
Anode-Cathode Voltage
40 V
Case Type
CHIP,WAFFLE
DC Forward Anode Current
150 mA
DC Gate Current
50 mA
ECCN Code
EAR99
Forward Voltage (VF)
1.5 V
Gate-Anode Leakage Current (IGAO)
10 nA
Gate-Anode Reverse Voltage
40 V
Gate-Cathode Forward Voltage
40 V
Gate-Cathode Leakage Current (IGKS)
50 nA
Gate-Cathode Reverse Voltage
5 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-50 — 100 °C
Offset Voltage (VT)
0.2 — 0.6 V
Offset Voltage (VT)
0.2 — 1.6 V
Peak Current (IP)
5 µA
Peak Current (IP)
2 µA
Peak One Cycle Surge Current
5 A
Peak Repetitive Forward Current
2 A
Peak Repetitive Forward Current
1 A
Power Dissipation
300 mW
Pulse Output Voltage (VO)
6 V
Pulse Voltage Rate of Rise (tr)
80 ns
Storage Temperature (Tstg)
-55 — 150 °C
Valley Current (IV)
70 µA
Valley Current (IV)
1500 µA
Valley Current (IV)
50 µA
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT | WafflePack | 400 | PBFREE | |
| Active | 40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT | WafflePack | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP622-2N6027_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |