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CP635-2N3791
60V,10A,150W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,106.000 X 106.000 mils,Transistor-Bipolar Power (>1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
4 V
Base-Emitter On Voltage (VBE(ON))
1.8 V
Case Type
CHIP,WAFFLE
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
4 A
Continuous Collector Current
10 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
50 — 180 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
150 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
1.17 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 60V,10A,150W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,106.000 X 106.000 mils,Transistor-Bipolar Power (>1A) | WafflePack | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP635-2N3791_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Product EOL Notice:CP635 | Product EOL Notice |