CP664V-2N2608
1V,4V,50mA,300mW Bare die,18.980 X 18.980 mils,JFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
17 pF
Continuous Gate Current
50 mA
Drain-Gate Voltage
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transadmittance (gfs)
1 mS
Gate Leakage Current (IGSS)
10 nA
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
1 — 4 V
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.21.0040
Noise Figure (NF)
3 dB
Power Dissipation
300 mW
Saturation Drain Current (IDSS)
900 — 4500 µA
Storage Temperature (Tstg)
-60 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 1V,4V,50mA,300mW Bare die,18.980 X 18.980 mils,JFET | WafflePack | 400 | PBFREE | |
| Active | 1V,4V,50mA,300mW Bare die,18.980 X 18.980 mils,JFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP664V-2N2608_WPD.pdf | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |