CP664V-2N5460
.75V,6V,10mA,310mW Bare die,18.980 X 18.980 mils,JFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Forward Transadmittance (yfs)
1 — 4 mS
Common Source Input Capacitance (Ciss)
7 pF
Common Source Reverse Transfer Capacitance (Crss)
2 pF
Continuous Gate Current
10 mA
Drain-Gate Voltage
40 V
ECCN Code
EAR99
Equivalent Input Noise Voltage (eN)
115 nV/√Hz
Gate Leakage Current (IGSS)
1000 nA
Gate Leakage Current (IGSS)
5 nA
Gate-Source Breakdown Voltage (BVGSS)
40 V
Gate-Source Cutoff Voltage (VGS(OFF))
0.75 — 6 V
Gate-Source Voltage (VGS)
0.5 — 4 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2.5 dB
Output Admittance (yos)
75 µS
Power Dissipation
310 mW
Reverse Gate-Source Voltage
40 V
Saturation Drain Current (IDSS)
1000 — 5000 µA
Storage Temperature (Tstg)
-65 — 150 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | .75V,6V,10mA,310mW Bare die,18.980 X 18.980 mils,JFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP664V-2N5460_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |