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AEM

CP705V-D41D11

75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
CHIP,WAFFLE
Collector-Emitter Breakdown Voltage (BVCEO)
75 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
75 V
Collector-Emitter Voltage (VCES)
90 V
Continuous Collector Current
1 A
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
120 — 360 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
1.5 A
Power Dissipation
6.25 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
20 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A)WafflePack400PBFREE
Special Order Item75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A)WafflePack200PBFREE
Active75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A)WafflePack400PBFREE
Special Order Item75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A)WafflePack200PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP705V_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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