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CP761R-CEDM8001
100mA,20V Bare die,14.173 X 14.173 mils,MOSFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
45 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
15 pF
Continuous Drain Current
100 mA
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
100 mS
Gate Leakage Current, Forward (IGSSF)
1000 nA
Gate Leakage Current, Reverse (IGSSR)
1000 nA
Gate Threshold Voltage (VGS(th))
0.6 — 1.1 V
Gate-Drain Charge (Qgd)
0.181 nC
Gate-Source Charge (Qgs)
0.158 nC
Gate-Source Voltage (VGS)
10 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
200 mA
Power Dissipation
100 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
8 Ω
Static Drain-Source On Resistance (rDS(ON))
12 Ω
Static Drain-Source On Resistance (rDS(ON))
45 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.658 nC
Turn Off Time (toff)
80 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 100mA,20V Bare die,14.173 X 14.173 mils,MOSFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP761R-CEDM8001_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |