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AEM

CP771-CXDM4060P

6A,40V Bare die,32.000 X 55.000 mils,MOSFET

Specifications

Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
1273 pF
Common Source Output Capacitance (Coss)
100.5 pF
Common Source Reverse Transfer Capacitance (Crss)
83.1 pF
Continuous Drain Current
6 A
Diode Forward On Voltage (VSD)
1.5 V
Drain-Source Breakdown Voltage (BVDSS)
40 V
Drain-Source Voltage
40 V
ECCN Code
EAR99
Fall Time (tf)
10.7 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 3 V(2 V Typical)
Gate-Drain Charge (Qgd)
6.3 nC
Gate-Source Charge (Qgs)
2.7 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
20 A
Power Dissipation
1.2 W
Rise Time (tr)
5.2 ns
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.065 Ω
Static Drain-Source On Resistance (rDS(ON))
0.095 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W
Total Gate Charge (Qg)
16 nC
Turn Off Time (toff)
55.7 ns
Turn On Time (ton)
13.1 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued6A,40V Bare die,32.000 X 55.000 mils,MOSFETWafflePack400PBFREE

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