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AEM

CP794R-CEDM8004

450mA,30V Bare die,15.700 X 15.700 mils,MOSFET

Specifications

Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
55 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
10 pF
Continuous Drain Current
450 mA
Continuous Source Current (Body Diode)
450 mA
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
3000 nA
Gate Leakage Current, Reverse (IGSSR)
3000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.128 nC
Gate-Source Charge (Qgs)
0.35 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
1 A
On State Drain Current (ID(ON))
400 mA
Power Dissipation
100 mW
Saturation Drain Current (IDSS)
500 µA
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
1.1 Ω
Static Drain-Source On Resistance (rDS(ON))
3.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
1250 °C/W
Thermal Resistance Junction-Case
800 °C/W
Total Gate Charge (Qg)
0.88 nC
Turn Off Time (toff)
250 ns
Turn On Time (ton)
200 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active450mA,30V Bare die,15.700 X 15.700 mils,MOSFETWafflePack400PBFREE

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