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CP798X-CPDM302PH
Bare die,37.800 X 26.000 mils,P-Chan Enhancement Mode MOSFET
Specifications
Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
800 pF
Common Source Output Capacitance (Coss)
62 pF
Common Source Reverse Transfer Capacitance (Crss)
69 pF
Continuous Drain Current
2.4 A
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transconductance (gFS)
4600 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.7 — 1.4 V
Gate-Drain Charge (Qgd)
2.6 nC
Gate-Source Charge (Qgs)
4.2 nC
Gate-Source Voltage (VGS)
12 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
9.6 A
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.091 Ω
Static Drain-Source On Resistance (rDS(ON))
0.129 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
9.6 nC
Turn Off Time (toff)
17 ns
Turn On Time (ton)
12 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Special Order Item | Bare die,37.800 X 26.000 mils,P-Chan Enhancement Mode MOSFET | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP798X-CPDM302PH_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:P-Channel MOSFET Wafers | Process Change Notice |