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CPC05-SIC05-1200
Bare die,54.300 X 76.800 mils,5A, 1200V SiC Schottky Diode
Specifications
Average Forward Current
5 A
Case Type
CHIP,WAFFLE
Continuous Forward Current
5 A
Continuous Reverse Voltage
1.2 kV
ECCN Code
EAR99
Forward Voltage (VF)
3 V
Forward Voltage (VF)
1.7 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
24 pF
Junction Capacitance (CJ)
19 pF
Junction Capacitance (CJ)
260 pF
Junction Temperature (Tj)
-55 — 175 °C
Peak Forward Surge Current
37.5 A
Peak Non-Repetitive Reverse Voltage
1.2 kV
Peak Repetitive Reverse Voltage
1.2 kV
Power Dissipation
42 W
Power Dissipation
150 W
Reverse Voltage Leakage Current (IR)
190 µA
Single Pulse Avalanche Energy
44 mJ
Storage Temperature (Tstg)
-55 — 175 °C
Stored Charge (QC)
26 nC
Thermal Resistance Junction-Case
1.6 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,54.300 X 76.800 mils,5A, 1200V SiC Schottky Diode | WafflePack | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPC05-SIC05-1200_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Product Brief:PB for Silicon Carbide Die | Product Brief |