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CPD06-1N5550
3A,200V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose
Specifications
Average Forward Current
3 A
Case Type
CHIP,WAFFLE
Continuous Reverse Voltage
200 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
100 A
Peak Repetitive Reverse Voltage
200 V
Reverse Breakdown Voltage (BVR)
240 V
Reverse Recovery Time (trr)
2000 ns
Reverse Voltage Leakage Current (IR)
75 µA
Reverse Voltage Leakage Current (IR)
1 µA
RMS Reverse Voltage
140 V
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Lead
30 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 3A,200V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose | WafflePack | 100 | PBFREE | |
| Active | 3A,200V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose | WafflePack | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD06-1N5550_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPD06 Anode Pad Size Increase | Process Change Notice |