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AEM

CPD104R-CFSH2-3L

200mA,30V Bare die,14.567 X 14.567 mils,Diode-Schottky (<1A)

Specifications

Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
0.25 V
Forward Voltage (VF)
0.3 V
Forward Voltage (VF)
0.4 V
Forward Voltage (VF)
0.48 V
Forward Voltage (VF)
0.19 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
25 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
3 A
Peak Repetitive Reverse Voltage
30 V
Power Dissipation
100 mW
Reverse Breakdown Voltage (BVR)
30 V
Reverse Voltage Leakage Current (IR)
50 µA
Reverse Voltage Leakage Current (IR)
10 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
1250 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active200mA,30V Bare die,14.567 X 14.567 mils,Diode-Schottky (<1A)WafflePack400PBFREE

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