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AEM

CPD112R-SH05-20L

Bare die,14.960 X 14.960 mils,Low VF Schottky Diode

Specifications

Average Forward Current
500 mA
Case Type
CHIP,WAFFLE
Continuous Reverse Voltage
20 V
ECCN Code
EAR99
Forward Voltage (VF)
0.29 V
Forward Voltage (VF)
0.18 V
Forward Voltage (VF)
0.38 V
Forward Voltage (VF)
0.5 V
Forward Voltage (VF)
0.24 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
30 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
3 A
Peak Repetitive Reverse Voltage
20 V
Reverse Breakdown Voltage (BVR)
20 V
Reverse Voltage Leakage Current (IR)
30 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
1000 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
ActiveBare die,14.960 X 14.960 mils,Low VF Schottky DiodeWafflePack400PBFREE
ActiveBare die,14.960 X 14.960 mils,Low VF Schottky DiodeWafflePack400PBFREE

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